Metalorganic vapor phase epitaxy 1994MINAGAWA, SHIGEKAZU; HORIKOSHI, YOSHIJI.Journal of crystal growth. 1994, Vol 145, Num 1-4, issn 0022-0248, 1022 p.Conference Proceedings

Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N₂SATO, M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 99-103, issn 0022-0248Conference Paper

Novel nitrogen source materials in zinc selenide metalorganic chemical vapor depositionKAMATA, A.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 557-561, issn 0022-0248Conference Paper

In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorptionKOBAYASHI, N.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 1-11, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy using organic group V precursorsKOMENO, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 468-472, issn 0022-0248Conference Paper

Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodesNAKAMURA, S.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 911-917, issn 0022-0248Conference Paper

Scanning tunneling microscopy study of two-dimensional nuclei on GaAs grown by metalorganic chemical vapor depositionKASU, M; KOBAYASHI, N.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 120-125, issn 0022-0248Conference Paper

Selective area metalorganic chemical vapor deposition growth for hexagonal-facet lasersANDO, S; KOBAYASHI, N; ANDO, H et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 302-307, issn 0022-0248Conference Paper

The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphineIZUMIYA, T; ISHIKAWA, H; MASHITA, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 153-157, issn 0022-0248Conference Paper

Dependence of carbon incorporation on crystallographic orientation during metalorganic vapor phase epitaxy of GaAs and AlGaAsKONDO, M; TANAHASHI, T.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 390-396, issn 0022-0248Conference Paper

Developments in metalorganic precursors vapour phase epitaxyJONES, A. C.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 505-511, issn 0022-0248Conference Paper

Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodesFUJITA, SZ; FUJITA, SG.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 552-556, issn 0022-0248Conference Paper

Relaxation process in strained InGaAs/InP quantum wells studied by X-ray topographyMUKAI, K; SUGAWARA, M; YAMAZAKI, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 752-757, issn 0022-0248Conference Paper

Study of threading dislocation reduction by strained interlayer in InP layers grown on GaAs substratesOKUNO, Y; KAWANO, T.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 338-344, issn 0022-0248Conference Paper

The growth of GaAs/Al_xGa_1-xAs with DEAlH-NMe₃ as Al source and MEAS and DMAAs as liquid As compoundsHÖVEL, R; STEIMETZ, E; HEIME, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 498-504, issn 0022-0248Conference Paper

The presence of isolated hydrogen donors in heavily carbon-doped GaAsFUSHIMI, H; WADA, K.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 420-426, issn 0022-0248Conference Paper

A study of the growth kinetics of II-VI metalorganic vapour phase epitaxy using in situ laser reflectometryIRVINE, S. J. C; BAJAJ, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 74-81, issn 0022-0248Conference Paper

Characterization of GaInP layers grown on GaAs substrates monitored by surface photo-absorptionYANAGISAWA, H; TANAKA, T; MINAGAWA, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 12-16, issn 0022-0248Conference Paper

Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInPMANNOH, M; ISHIBASHI, A; OHNAKA, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 158-163, issn 0022-0248Conference Paper

Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporationHUANG, J. W; KUECH, T. F.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 462-467, issn 0022-0248Conference Paper

Highly uniform InGaAsP growth by dual-layer structure metalorganic vapor phase epitaxy reactor with atmospheric pressureMATSUMOTO, T; NAKAMURA, T.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 622-629, issn 0022-0248Conference Paper

Misfit dislocation arrangements at (Hg_xMn_1-x)Te/CdTe and (Hg_xMn_1-x)Te/CdZnTe heterointerfaces on (001), (111)B and (112)B substratesTATSUOKA, H; DUROSE, K; FUNAKI, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 589-595, issn 0022-0248Conference Paper

Strained InGaAs quantum wire and box structures self-organized on high-index GaAs (n11)A and (n11)B substratesNÖTZEL, R; TEMMYO, J; TAMAMURA, T et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 990-991, issn 0022-0248Conference Paper

Evaluation of p-n junction shift by the capacitance-voltage methodYAMAMOTO, N; YAMAMOTO, M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 941-946, issn 0022-0248Conference Paper

High-resolution transmission electron microscopy characterization of III-IV compounds in Si grown by metalorganic chemical vapor depositionSOGA, T; JIMBO, T; UMENO, M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 358-362, issn 0022-0248Conference Paper